Infineon Technologies - IPS65R950C6AKMA1

KEY Part #: K6398089

IPS65R950C6AKMA1 Pricing (USD) [72496pcs Stock]

  • 1 pcs$0.49754
  • 10 pcs$0.43942

Part Number:
IPS65R950C6AKMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 650V 4.5A TO-251.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Arrays, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - Special Purpose and Power Driver Modules ...
Competitive Advantage:
We specialize in Infineon Technologies IPS65R950C6AKMA1 electronic components. IPS65R950C6AKMA1 can be shipped within 24 hours after order. If you have any demands for IPS65R950C6AKMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPS65R950C6AKMA1 Product Attributes

Part Number : IPS65R950C6AKMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 650V 4.5A TO-251
Series : CoolMOS™
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 950 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 15.3nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 328pF @ 100V
FET Feature : -
Power Dissipation (Max) : 37W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO251-3
Package / Case : TO-251-3 Stub Leads, IPak

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