RT1A045APTCR Pricing (USD) [420169pcs Stock]
- 1 pcs$0.08803
- 3,000 pcs$0.05456
- Part Number:
- RT1A045APTCR
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET P-CH 12V 4.5A TSST8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Single, Transistors - Bipolar (BJT) - RF, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RT1A045APTCR electronic components. RT1A045APTCR can be shipped within 24 hours after order. If you have any demands for RT1A045APTCR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RT1A045APTCR Product Attributes
Part Number :
RT1A045APTCR
Manufacturer :
Rohm Semiconductor
Description :
MOSFET P-CH 12V 4.5A TSST8
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Current - Continuous Drain (Id) @ 25°C :
4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
30 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 4.5V
Vgs (Max) :
-8V
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 6V
FET Feature :
-
Power Dissipation (Max) :
650mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-TSST
Package / Case :
8-SMD, Flat Lead
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