DMG4N65CTI Pricing (USD) [76194pcs Stock]
- 1 pcs$0.41392
- 50 pcs$0.30208
- 100 pcs$0.26313
- 500 pcs$0.19490
- 1,000 pcs$0.15592
- Part Number:
- DMG4N65CTI
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 650V 4A ITO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Thyristors - SCRs, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMG4N65CTI electronic components. DMG4N65CTI can be shipped within 24 hours after order. If you have any demands for DMG4N65CTI, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG4N65CTI Product Attributes
Part Number :
DMG4N65CTI
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 650V 4A ITO-220AB
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
13.5nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
900pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
8.35W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
ITO-220AB
Package / Case :
TO-220-3 Full Pack, Isolated Tab
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