STP100N10F7 Pricing (USD) [32472pcs Stock]
- 1 pcs$1.20311
- 10 pcs$1.03020
- 100 pcs$0.82784
- 500 pcs$0.64387
- 1,000 pcs$0.53350
- Part Number:
- STP100N10F7
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N CH 100V 80A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - Bipolar (BJT) - RF, Diodes - Bridge Rectifiers, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in STMicroelectronics STP100N10F7 electronic components. STP100N10F7 can be shipped within 24 hours after order. If you have any demands for STP100N10F7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STP100N10F7 Product Attributes
Part Number :
STP100N10F7
Manufacturer :
STMicroelectronics
Description :
MOSFET N CH 100V 80A TO-220
Series :
DeepGATE™, STripFET™ VII
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
8 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
61nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4369pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
150W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220
Package / Case :
TO-220-3
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