Vishay Semiconductor Diodes Division - VS-1EFH02-M3/I

KEY Part #: K6435868

VS-1EFH02-M3/I Pricing (USD) [876652pcs Stock]

  • 1 pcs$0.04219
  • 10,000 pcs$0.03824

Part Number:
VS-1EFH02-M3/I
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 200V 1A SMF. Rectifiers Hypfst Rect 1A 200V
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single, Thyristors - TRIACs, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Bridge Rectifiers and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-1EFH02-M3/I electronic components. VS-1EFH02-M3/I can be shipped within 24 hours after order. If you have any demands for VS-1EFH02-M3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-1EFH02-M3/I Product Attributes

Part Number : VS-1EFH02-M3/I
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 200V 1A SMF
Series : FRED Pt®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 930mV @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 16ns
Current - Reverse Leakage @ Vr : 2µA @ 200V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : DO-219AB
Supplier Device Package : DO-219AB (SMF)
Operating Temperature - Junction : -65°C ~ 175°C

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