IPW65R080CFDAFKSA1 Pricing (USD) [7014pcs Stock]
- 1 pcs$5.30603
- 10 pcs$4.77631
- 100 pcs$3.92712
- 500 pcs$3.29028
- Part Number:
- IPW65R080CFDAFKSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 700V 43.3A TO247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs, Diodes - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Single, Thyristors - TRIACs, Diodes - Zener - Arrays and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPW65R080CFDAFKSA1 electronic components. IPW65R080CFDAFKSA1 can be shipped within 24 hours after order. If you have any demands for IPW65R080CFDAFKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPW65R080CFDAFKSA1 Product Attributes
Part Number :
IPW65R080CFDAFKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 700V 43.3A TO247
Series :
Automotive, AEC-Q101, CoolMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
43.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
80 mOhm @ 17.6A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 1.76mA
Gate Charge (Qg) (Max) @ Vgs :
161nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4440pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
391W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO247-3
Package / Case :
TO-247-3
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