TSM110NB04LCR RLG Pricing (USD) [343072pcs Stock]
- 1 pcs$0.10781
- Part Number:
- TSM110NB04LCR RLG
- Manufacturer:
- Taiwan Semiconductor Corporation
- Detailed description:
- MOSFET SINGLE N-CHANNEL TRENCH.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - Special Purpose, Transistors - IGBTs - Modules, Transistors - Programmable Unijunction and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in Taiwan Semiconductor Corporation TSM110NB04LCR RLG electronic components. TSM110NB04LCR RLG can be shipped within 24 hours after order. If you have any demands for TSM110NB04LCR RLG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM110NB04LCR RLG Product Attributes
Part Number :
TSM110NB04LCR RLG
Manufacturer :
Taiwan Semiconductor Corporation
Description :
MOSFET SINGLE N-CHANNEL TRENCH
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
12A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
11 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1269pF @ 20V
FET Feature :
-
Power Dissipation (Max) :
3.1W (Ta), 68W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-PDFN (5x6)
Package / Case :
8-PowerTDFN
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