IXYS - IXTQ30N60P

KEY Part #: K6394881

IXTQ30N60P Pricing (USD) [16528pcs Stock]

  • 1 pcs$2.88183
  • 30 pcs$2.86749

Part Number:
IXTQ30N60P
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 600V 30A TO-3P.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - Special Purpose, Thyristors - DIACs, SIDACs, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs - Modules, Diodes - Bridge Rectifiers and Diodes - RF ...
Competitive Advantage:
We specialize in IXYS IXTQ30N60P electronic components. IXTQ30N60P can be shipped within 24 hours after order. If you have any demands for IXTQ30N60P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTQ30N60P Product Attributes

Part Number : IXTQ30N60P
Manufacturer : IXYS
Description : MOSFET N-CH 600V 30A TO-3P
Series : PolarHV™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 240 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 82nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 5050pF @ 25V
FET Feature : -
Power Dissipation (Max) : 540W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3