Renesas Electronics America - H7N1002LS-E

KEY Part #: K6402405

[8791pcs Stock]


    Part Number:
    H7N1002LS-E
    Manufacturer:
    Renesas Electronics America
    Detailed description:
    MOSFET N-CH 100V LDPAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Programmable Unijunction, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Transistors - JFETs, Transistors - Bipolar (BJT) - Single and Diodes - Zener - Single ...
    Competitive Advantage:
    We specialize in Renesas Electronics America H7N1002LS-E electronic components. H7N1002LS-E can be shipped within 24 hours after order. If you have any demands for H7N1002LS-E, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    H7N1002LS-E Product Attributes

    Part Number : H7N1002LS-E
    Manufacturer : Renesas Electronics America
    Description : MOSFET N-CH 100V LDPAK
    Series : -
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 100V
    Current - Continuous Drain (Id) @ 25°C : 75A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 10 mOhm @ 37.5A, 10V
    Vgs(th) (Max) @ Id : -
    Gate Charge (Qg) (Max) @ Vgs : 155nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 9700pF @ 10V
    FET Feature : -
    Power Dissipation (Max) : 100W (Tc)
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 4-LDPAK
    Package / Case : SC-83