IRFS3307ZPBF Pricing (USD) [8412pcs Stock]
- 1 pcs$1.30447
- 10 pcs$1.17843
- 100 pcs$0.89841
- 500 pcs$0.69876
- 1,000 pcs$0.57898
- Part Number:
- IRFS3307ZPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 75V 120A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs, Transistors - FETs, MOSFETs - RF, Power Driver Modules, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFS3307ZPBF electronic components. IRFS3307ZPBF can be shipped within 24 hours after order. If you have any demands for IRFS3307ZPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFS3307ZPBF Product Attributes
Part Number :
IRFS3307ZPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 75V 120A D2PAK
Series :
HEXFET®
Part Status :
Discontinued at Digi-Key
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
75V
Current - Continuous Drain (Id) @ 25°C :
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
5.8 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id :
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4750pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
230W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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