NVMFS5832NLWFT1G Pricing (USD) [2580pcs Stock]
- 1,500 pcs$0.26847
- Part Number:
- NVMFS5832NLWFT1G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 40V 120A SO8FL.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Single, Transistors - IGBTs - Arrays, Thyristors - TRIACs and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in ON Semiconductor NVMFS5832NLWFT1G electronic components. NVMFS5832NLWFT1G can be shipped within 24 hours after order. If you have any demands for NVMFS5832NLWFT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVMFS5832NLWFT1G Product Attributes
Part Number :
NVMFS5832NLWFT1G
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 40V 120A SO8FL
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
51nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3.7W (Ta), 127W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
5-DFN (5x6) (8-SOFL)
Package / Case :
8-PowerTDFN
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