IXFT58N20Q Pricing (USD) [8356pcs Stock]
- 30 pcs$5.46615
- Part Number:
- IXFT58N20Q
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 200V 58A TO-268.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose, Diodes - Rectifiers - Arrays, Thyristors - TRIACs, Diodes - Bridge Rectifiers and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in IXYS IXFT58N20Q electronic components. IXFT58N20Q can be shipped within 24 hours after order. If you have any demands for IXFT58N20Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFT58N20Q Product Attributes
Part Number :
IXFT58N20Q
Manufacturer :
IXYS
Description :
MOSFET N-CH 200V 58A TO-268
Series :
HiPerFET™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
40 mOhm @ 29A, 10V
Vgs(th) (Max) @ Id :
4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
300W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-268
Package / Case :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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