IXYS - MMIX1F360N15T2

KEY Part #: K6395430

MMIX1F360N15T2 Pricing (USD) [2818pcs Stock]

  • 1 pcs$16.98918
  • 20 pcs$16.90466

Part Number:
MMIX1F360N15T2
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 150V 235A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Diodes - Rectifiers - Single, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in IXYS MMIX1F360N15T2 electronic components. MMIX1F360N15T2 can be shipped within 24 hours after order. If you have any demands for MMIX1F360N15T2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MMIX1F360N15T2 Product Attributes

Part Number : MMIX1F360N15T2
Manufacturer : IXYS
Description : MOSFET N-CH 150V 235A
Series : GigaMOS™, TrenchT2™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 235A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id : 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs : 715nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 47500pF @ 25V
FET Feature : -
Power Dissipation (Max) : 680W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 24-SMPD
Package / Case : 24-PowerSMD, 21 Leads