CSD25304W1015 Pricing (USD) [479105pcs Stock]
- 1 pcs$0.07720
- 3,000 pcs$0.06755
- Part Number:
- CSD25304W1015
- Manufacturer:
- Texas Instruments
- Detailed description:
- MOSFET P-CH 20V 3A 6DSBGA.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - JFETs, Diodes - RF and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Texas Instruments CSD25304W1015 electronic components. CSD25304W1015 can be shipped within 24 hours after order. If you have any demands for CSD25304W1015, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD25304W1015 Product Attributes
Part Number :
CSD25304W1015
Manufacturer :
Texas Instruments
Description :
MOSFET P-CH 20V 3A 6DSBGA
Series :
NexFET™
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
32.5 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id :
1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
4.4nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
595pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
750mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
6-DSBGA
Package / Case :
6-UFBGA, DSBGA
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