[3454pcs Stock]
- Part Number:
- PHB11N06LT,118
- Manufacturer:
- NXP USA Inc.
- Detailed description:
- MOSFET N-CH 55V 10.3A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs, Thyristors - TRIACs and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in NXP USA Inc. PHB11N06LT,118 electronic components. PHB11N06LT,118 can be shipped within 24 hours after order. If you have any demands for PHB11N06LT,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHB11N06LT,118 Product Attributes
Part Number :
PHB11N06LT,118
Manufacturer :
NXP USA Inc.
Description :
MOSFET N-CH 55V 10.3A D2PAK
Series :
TrenchMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
55V
Current - Continuous Drain (Id) @ 25°C :
10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
130 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id :
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
5.2nC @ 5V
Vgs (Max) :
±15V
Input Capacitance (Ciss) (Max) @ Vds :
330pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
33W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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