DMN3033LDM-7 Pricing (USD) [467536pcs Stock]
- 1 pcs$0.07911
- 3,000 pcs$0.07081
- Part Number:
- DMN3033LDM-7
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 30V 6.9A SOT-26.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - DIACs, SIDACs, Transistors - JFETs and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN3033LDM-7 electronic components. DMN3033LDM-7 can be shipped within 24 hours after order. If you have any demands for DMN3033LDM-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3033LDM-7 Product Attributes
Part Number :
DMN3033LDM-7
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 30V 6.9A SOT-26
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
33 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id :
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
755pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
2W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-26
Package / Case :
SOT-23-6
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