ON Semiconductor - NVMFS4C05NWFT3G

KEY Part #: K6402801

NVMFS4C05NWFT3G Pricing (USD) [2578pcs Stock]

  • 5,000 pcs$0.12709

Part Number:
NVMFS4C05NWFT3G
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 30V 116A SO8FL.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Diodes - Rectifiers - Single, Power Driver Modules, Transistors - Bipolar (BJT) - RF, Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs and Thyristors - SCRs - Modules ...
Competitive Advantage:
We specialize in ON Semiconductor NVMFS4C05NWFT3G electronic components. NVMFS4C05NWFT3G can be shipped within 24 hours after order. If you have any demands for NVMFS4C05NWFT3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMFS4C05NWFT3G Product Attributes

Part Number : NVMFS4C05NWFT3G
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 30V 116A SO8FL
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 24.7A (Ta), 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.4 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1972pF @ 15V
FET Feature : -
Power Dissipation (Max) : 3.61W (Ta), 79W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 5-DFN (5x6) (8-SOFL)
Package / Case : 8-PowerTDFN

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