SIDR610DP-T1-GE3 Pricing (USD) [48704pcs Stock]
- 1 pcs$0.80281
- Part Number:
- SIDR610DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CHAN 200V PPAK SO-8DC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Single, Power Driver Modules, Transistors - Special Purpose, Transistors - JFETs and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIDR610DP-T1-GE3 electronic components. SIDR610DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIDR610DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIDR610DP-T1-GE3 Product Attributes
Part Number :
SIDR610DP-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CHAN 200V PPAK SO-8DC
Series :
TrenchFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
8.9A (Ta), 39.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
7.5V, 10V
Rds On (Max) @ Id, Vgs :
31.9 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1380pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
6.25W (Ta), 125W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerPAK® SO-8DC
Package / Case :
PowerPAK® SO-8
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