SIHF5N50D-E3 Pricing (USD) [61527pcs Stock]
- 1 pcs$0.63551
- 10 pcs$0.56318
- 100 pcs$0.44507
- 500 pcs$0.32651
- 1,000 pcs$0.25777
- Part Number:
- SIHF5N50D-E3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 500V 5.3A TO220 FLPK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Thyristors - TRIACs, Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Arrays, Power Driver Modules, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIHF5N50D-E3 electronic components. SIHF5N50D-E3 can be shipped within 24 hours after order. If you have any demands for SIHF5N50D-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHF5N50D-E3 Product Attributes
Part Number :
SIHF5N50D-E3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 500V 5.3A TO220 FLPK
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
325pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
30W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220 Full Pack
Package / Case :
TO-220-3 Full Pack
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