Infineon Technologies - BSZ100N06NSATMA1

KEY Part #: K6420852

BSZ100N06NSATMA1 Pricing (USD) [272275pcs Stock]

  • 1 pcs$0.13585
  • 5,000 pcs$0.13038

Part Number:
BSZ100N06NSATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 60V 40A 8TSDSON.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modules, Power Driver Modules, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Thyristors - TRIACs and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSZ100N06NSATMA1 Product Attributes

Part Number : BSZ100N06NSATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 60V 40A 8TSDSON
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 10 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 3.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1075pF @ 30V
FET Feature : -
Power Dissipation (Max) : 2.1W (Ta), 36W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TSDSON-8-FL
Package / Case : 8-PowerTDFN

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