Vishay Siliconix - IRFBC30PBF

KEY Part #: K6399519

IRFBC30PBF Pricing (USD) [54057pcs Stock]

  • 1 pcs$0.63551
  • 10 pcs$0.56318
  • 100 pcs$0.44507
  • 500 pcs$0.32651
  • 1,000 pcs$0.25777

Part Number:
IRFBC30PBF
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 600V 3.6A TO-220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - Zener - Single, Thyristors - SCRs, Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Thyristors - SCRs - Modules, Diodes - RF and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Vishay Siliconix IRFBC30PBF electronic components. IRFBC30PBF can be shipped within 24 hours after order. If you have any demands for IRFBC30PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFBC30PBF Product Attributes

Part Number : IRFBC30PBF
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 600V 3.6A TO-220AB
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.2 Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 31nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 25V
FET Feature : -
Power Dissipation (Max) : 74W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3

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