IRFH7110TRPBF Pricing (USD) [144155pcs Stock]
- 1 pcs$0.38413
- 4,000 pcs$0.38221
- Part Number:
- IRFH7110TRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N CH 100V 11A PQFN 5X6.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Programmable Unijunction, Power Driver Modules, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - RF and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFH7110TRPBF electronic components. IRFH7110TRPBF can be shipped within 24 hours after order. If you have any demands for IRFH7110TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH7110TRPBF Product Attributes
Part Number :
IRFH7110TRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N CH 100V 11A PQFN 5X6
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
11A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
13.5 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id :
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
87nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3240pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3.6W (Ta), 104W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-PQFN (5x6)
Package / Case :
8-TQFN Exposed Pad
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