DMN2600UFB-7 Pricing (USD) [1317573pcs Stock]
- 1 pcs$0.02807
- 3,000 pcs$0.02602
- Part Number:
- DMN2600UFB-7
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 25V 1.3A DFN1006-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Programmable Unijunction, Thyristors - SCRs, Transistors - Special Purpose, Diodes - Bridge Rectifiers, Diodes - Rectifiers - Single, Diodes - Zener - Single and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN2600UFB-7 electronic components. DMN2600UFB-7 can be shipped within 24 hours after order. If you have any demands for DMN2600UFB-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2600UFB-7 Product Attributes
Part Number :
DMN2600UFB-7
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 25V 1.3A DFN1006-3
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
25V
Current - Continuous Drain (Id) @ 25°C :
1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
350 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
0.85nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
70.13pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
540mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
3-DFN1006 (1.0x0.6)
Package / Case :
3-UFDFN
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