IXYS - IXTP08N100D2

KEY Part #: K6399111

IXTP08N100D2 Pricing (USD) [56000pcs Stock]

  • 1 pcs$0.76930
  • 10 pcs$0.69530
  • 100 pcs$0.55879
  • 500 pcs$0.43461
  • 1,000 pcs$0.34064

Part Number:
IXTP08N100D2
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 1000V 0.8A TO220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Thyristors - SCRs - Modules, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Thyristors - DIACs, SIDACs, Diodes - Zener - Arrays, Diodes - Zener - Single and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in IXYS IXTP08N100D2 electronic components. IXTP08N100D2 can be shipped within 24 hours after order. If you have any demands for IXTP08N100D2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTP08N100D2 Product Attributes

Part Number : IXTP08N100D2
Manufacturer : IXYS
Description : MOSFET N-CH 1000V 0.8A TO220AB
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 21 Ohm @ 400mA, 0V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 14.6nC @ 5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 325pF @ 25V
FET Feature : Depletion Mode
Power Dissipation (Max) : 60W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3

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