SI8410DB-T2-E1 Pricing (USD) [185388pcs Stock]
- 1 pcs$0.19951
- 3,000 pcs$0.18735
- Part Number:
- SI8410DB-T2-E1
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 20V MICROFOOT.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs - Modules, Diodes - Rectifiers - Single and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI8410DB-T2-E1 electronic components. SI8410DB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8410DB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8410DB-T2-E1 Product Attributes
Part Number :
SI8410DB-T2-E1
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 20V MICROFOOT
Series :
TrenchFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
-
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
37 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id :
850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 8V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
620pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
780mW (Ta), 1.8W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
4-Micro Foot (1x1)
Package / Case :
4-UFBGA
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