Infineon Technologies - IRFS7730TRLPBF

KEY Part #: K6399211

IRFS7730TRLPBF Pricing (USD) [48176pcs Stock]

  • 1 pcs$0.81162
  • 800 pcs$0.69870

Part Number:
IRFS7730TRLPBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 75V 195A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Single and Diodes - Zener - Single ...
Competitive Advantage:
We specialize in Infineon Technologies IRFS7730TRLPBF electronic components. IRFS7730TRLPBF can be shipped within 24 hours after order. If you have any demands for IRFS7730TRLPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFS7730TRLPBF Product Attributes

Part Number : IRFS7730TRLPBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 75V 195A D2PAK
Series : HEXFET®, StrongIRFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 75V
Current - Continuous Drain (Id) @ 25°C : 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 2.6 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id : 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 407nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 13660pF @ 25V
FET Feature : -
Power Dissipation (Max) : 375W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D²PAK (TO-263AB)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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