Taiwan Semiconductor Corporation - TSM7N90CI C0G

KEY Part #: K6401996

TSM7N90CI C0G Pricing (USD) [31173pcs Stock]

  • 1 pcs$1.32210

Part Number:
TSM7N90CI C0G
Manufacturer:
Taiwan Semiconductor Corporation
Detailed description:
MOSFET N-CHANNEL 900V 7A ITO220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Single, Diodes - Zener - Arrays, Thyristors - DIACs, SIDACs and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in Taiwan Semiconductor Corporation TSM7N90CI C0G electronic components. TSM7N90CI C0G can be shipped within 24 hours after order. If you have any demands for TSM7N90CI C0G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM7N90CI C0G Product Attributes

Part Number : TSM7N90CI C0G
Manufacturer : Taiwan Semiconductor Corporation
Description : MOSFET N-CHANNEL 900V 7A ITO220
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.9 Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 49nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1969pF @ 25V
FET Feature : -
Power Dissipation (Max) : 40.3W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : ITO-220AB
Package / Case : TO-220-3 Full Pack, Isolated Tab

You May Also Be Interested In
  • VN0109N3-G

    Microchip Technology

    MOSFET N-CH 90V 0.35A TO92-3.

  • ZVN3310ASTZ

    Diodes Incorporated

    MOSFET N-CH 100V 200MA TO92-3.

  • BS107PSTZ

    Diodes Incorporated

    MOSFET N-CH 200V 0.12A TO92-3.

  • ZVN2106ASTZ

    Diodes Incorporated

    MOSFET N-CH 60V 0.45A TO92-3.

  • LND150N3-G-P003

    Microchip Technology

    MOSFET N-CH 500V 30MA TO92-3.

  • ZVN2110ASTZ

    Diodes Incorporated

    MOSFET N-CH 100V 320MA TO92-3.