IRFB4137PBF Pricing (USD) [13397pcs Stock]
- 1 pcs$2.95269
- 10 pcs$2.63671
- 100 pcs$2.16207
- 500 pcs$1.75074
- 1,000 pcs$1.47653
- Part Number:
- IRFB4137PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 300V 38A TO-220PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - RF, Transistors - Programmable Unijunction and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFB4137PBF electronic components. IRFB4137PBF can be shipped within 24 hours after order. If you have any demands for IRFB4137PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB4137PBF Product Attributes
Part Number :
IRFB4137PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 300V 38A TO-220PAK
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
300V
Current - Continuous Drain (Id) @ 25°C :
38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
69 mOhm @ 24A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
125nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5168pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
341W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220
Package / Case :
TO-220-3
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