Infineon Technologies - IRF9Z24NS

KEY Part #: K6414908

[12592pcs Stock]


    Part Number:
    IRF9Z24NS
    Manufacturer:
    Infineon Technologies
    Detailed description:
    MOSFET P-CH 55V 12A D2PAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - IGBTs - Single, Thyristors - SCRs, Diodes - Bridge Rectifiers, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - Single ...
    Competitive Advantage:
    We specialize in Infineon Technologies IRF9Z24NS electronic components. IRF9Z24NS can be shipped within 24 hours after order. If you have any demands for IRF9Z24NS, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRF9Z24NS Product Attributes

    Part Number : IRF9Z24NS
    Manufacturer : Infineon Technologies
    Description : MOSFET P-CH 55V 12A D2PAK
    Series : HEXFET®
    Part Status : Obsolete
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 55V
    Current - Continuous Drain (Id) @ 25°C : 12A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 175 mOhm @ 7.2A, 10V
    Vgs(th) (Max) @ Id : 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 19nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 3.8W (Ta), 45W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : D2PAK
    Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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