Part Number :
IPB50N10S3L16ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 50A TO263-3
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
15.4 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id :
2.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs :
64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
4180pF @ 25V
Power Dissipation (Max) :
100W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TO263-3-2
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB