[3237pcs Stock]
- Part Number:
- IXTM11N80
- Manufacturer:
- IXYS
- Detailed description:
- POWER MOSFET TO-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in IXYS IXTM11N80 electronic components. IXTM11N80 can be shipped within 24 hours after order. If you have any demands for IXTM11N80, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTM11N80 Product Attributes
Part Number :
IXTM11N80
Manufacturer :
IXYS
Description :
POWER MOSFET TO-3
Series :
GigaMOS™
Part Status :
Last Time Buy
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
950 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
300W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-204AA
Package / Case :
TO-204AA, TO-3
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