DMN62D1LFDQ-7 Pricing (USD) [809428pcs Stock]
- 1 pcs$0.04570
- Part Number:
- DMN62D1LFDQ-7
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- 2N7002 FAMILY X1-DFN1212-3 TR 3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Power Driver Modules, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN62D1LFDQ-7 electronic components. DMN62D1LFDQ-7 can be shipped within 24 hours after order. If you have any demands for DMN62D1LFDQ-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN62D1LFDQ-7 Product Attributes
Part Number :
DMN62D1LFDQ-7
Manufacturer :
Diodes Incorporated
Description :
2N7002 FAMILY X1-DFN1212-3 TR 3
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4V
Rds On (Max) @ Id, Vgs :
2 Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
0.55nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
36pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
500mW
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
U-DFN1212-3
Package / Case :
3-UDFN
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