[3476pcs Stock]
- Part Number:
- PHT2NQ10T,135
- Manufacturer:
- NXP USA Inc.
- Detailed description:
- MOSFET N-CH 100V 2.5A SOT223.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Transistors - JFETs, Thyristors - SCRs - Modules and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in NXP USA Inc. PHT2NQ10T,135 electronic components. PHT2NQ10T,135 can be shipped within 24 hours after order. If you have any demands for PHT2NQ10T,135, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHT2NQ10T,135 Product Attributes
Part Number :
PHT2NQ10T,135
Manufacturer :
NXP USA Inc.
Description :
MOSFET N-CH 100V 2.5A SOT223
Series :
TrenchMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
430 mOhm @ 1.75A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
5.1nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
160pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
6.25W (Tc)
Operating Temperature :
-65°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-223
Package / Case :
TO-261-4, TO-261AA
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