UPA2820T1S-E2-AT Pricing (USD) [203351pcs Stock]
- 1 pcs$0.19103
- 5,000 pcs$0.19008
- Part Number:
- UPA2820T1S-E2-AT
- Manufacturer:
- Renesas Electronics America
- Detailed description:
- MOSFET N-CH 30V 8HVSON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Diodes - Rectifiers - Single and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in Renesas Electronics America UPA2820T1S-E2-AT electronic components. UPA2820T1S-E2-AT can be shipped within 24 hours after order. If you have any demands for UPA2820T1S-E2-AT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
UPA2820T1S-E2-AT Product Attributes
Part Number :
UPA2820T1S-E2-AT
Manufacturer :
Renesas Electronics America
Description :
MOSFET N-CH 30V 8HVSON
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5.3 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2330pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
1.5W (Ta), 16W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
-
Package / Case :
8-PowerWDFN
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