FQA13N80-F109 Pricing (USD) [15181pcs Stock]
- 1 pcs$2.71471
- Part Number:
- FQA13N80-F109
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 800V 12.6A TO-3P.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs, Thyristors - SCRs, Diodes - Zener - Arrays and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor FQA13N80-F109 electronic components. FQA13N80-F109 can be shipped within 24 hours after order. If you have any demands for FQA13N80-F109, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQA13N80-F109 Product Attributes
Part Number :
FQA13N80-F109
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 800V 12.6A TO-3P
Series :
QFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
750 mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
88nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3500pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
300W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-3PN
Package / Case :
TO-3P-3, SC-65-3
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