TPH5900CNH,L1Q Pricing (USD) [185557pcs Stock]
- 1 pcs$0.20934
- 5,000 pcs$0.20830
- Part Number:
- TPH5900CNH,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 150V 9A 8SOP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs, Diodes - Bridge Rectifiers, Diodes - Zener - Single, Diodes - Rectifiers - Single, Transistors - Special Purpose and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TPH5900CNH,L1Q electronic components. TPH5900CNH,L1Q can be shipped within 24 hours after order. If you have any demands for TPH5900CNH,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPH5900CNH,L1Q Product Attributes
Part Number :
TPH5900CNH,L1Q
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 150V 9A 8SOP
Series :
U-MOSVIII-H
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
150V
Current - Continuous Drain (Id) @ 25°C :
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
59 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs :
7nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
600pF @ 75V
FET Feature :
-
Power Dissipation (Max) :
1.6W (Ta), 42W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SOP Advance (5x5)
Package / Case :
8-PowerVDFN
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