IPB049N08N5ATMA1 Pricing (USD) [75764pcs Stock]
- 1 pcs$0.51609
- 1,000 pcs$0.47348
- Part Number:
- IPB049N08N5ATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 80V TO263-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - RF, Power Driver Modules and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPB049N08N5ATMA1 electronic components. IPB049N08N5ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB049N08N5ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB049N08N5ATMA1 Product Attributes
Part Number :
IPB049N08N5ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 80V TO263-3
Series :
OptiMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
4.9 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id :
3.8V @ 66µA
Gate Charge (Qg) (Max) @ Vgs :
53nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3770pF @ 40V
FET Feature :
-
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D²PAK (TO-263AB)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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