[677pcs Stock]
- Part Number:
- IRFS59N10DTRRP
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 100V 59A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Diodes - Rectifiers - Arrays, Transistors - JFETs and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFS59N10DTRRP electronic components. IRFS59N10DTRRP can be shipped within 24 hours after order. If you have any demands for IRFS59N10DTRRP, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFS59N10DTRRP Product Attributes
Part Number :
IRFS59N10DTRRP
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 59A D2PAK
Series :
HEXFET®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 35.4A, 10V
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
114nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2450pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3.8W (Ta), 200W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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