IRFHM8228TRPBF Pricing (USD) [247954pcs Stock]
- 1 pcs$0.14917
- 4,000 pcs$0.12793
- Part Number:
- IRFHM8228TRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 25V 19A 8PQFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Transistors - Programmable Unijunction, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Single and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFHM8228TRPBF electronic components. IRFHM8228TRPBF can be shipped within 24 hours after order. If you have any demands for IRFHM8228TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHM8228TRPBF Product Attributes
Part Number :
IRFHM8228TRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 25V 19A 8PQFN
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
25V
Current - Continuous Drain (Id) @ 25°C :
19A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1667pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
2.8W (Ta), 34W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-PQFN (3.3x3.3), Power33
Package / Case :
8-PowerTDFN
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