Infineon Technologies - BSC060N10NS3GATMA1

KEY Part #: K6409735

BSC060N10NS3GATMA1 Pricing (USD) [61491pcs Stock]

  • 1 pcs$0.63587
  • 5,000 pcs$0.43048

Part Number:
BSC060N10NS3GATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 100V 90A TDSON-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
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Competitive Advantage:
We specialize in Infineon Technologies BSC060N10NS3GATMA1 electronic components. BSC060N10NS3GATMA1 can be shipped within 24 hours after order. If you have any demands for BSC060N10NS3GATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC060N10NS3GATMA1 Product Attributes

Part Number : BSC060N10NS3GATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 100V 90A TDSON-8
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 14.9A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 6 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs : 68nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4900pF @ 50V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TDSON-8
Package / Case : 8-PowerTDFN

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