IRFB4227PBF Pricing (USD) [26568pcs Stock]
- 1 pcs$1.30006
- 10 pcs$1.17270
- 100 pcs$0.89407
- 500 pcs$0.69538
- 1,000 pcs$0.57618
- Part Number:
- IRFB4227PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 200V 65A TO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFB4227PBF electronic components. IRFB4227PBF can be shipped within 24 hours after order. If you have any demands for IRFB4227PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB4227PBF Product Attributes
Part Number :
IRFB4227PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 200V 65A TO-220AB
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
24 mOhm @ 46A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
98nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4600pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
330W (Tc)
Operating Temperature :
-40°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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