STH110N7F6-2 Pricing (USD) [180195pcs Stock]
- 1 pcs$0.20526
- 2,000 pcs$0.18272
- Part Number:
- STH110N7F6-2
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 68V 80A H2PAK-2.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs, Diodes - Rectifiers - Single, Thyristors - TRIACs, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in STMicroelectronics STH110N7F6-2 electronic components. STH110N7F6-2 can be shipped within 24 hours after order. If you have any demands for STH110N7F6-2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STH110N7F6-2 Product Attributes
Part Number :
STH110N7F6-2
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 68V 80A H2PAK-2
Series :
STripFET™ F6
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
68V
Current - Continuous Drain (Id) @ 25°C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
6.3 mOhm @ 55A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
100nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5850pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
176W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
H2Pak-2
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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