RW1E025RPT2CR Pricing (USD) [1208286pcs Stock]
- 1 pcs$0.03384
- 8,000 pcs$0.03367
- Part Number:
- RW1E025RPT2CR
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET P-CH 30V 2.5A WEMT6.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - JFETs, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs, Transistors - IGBTs - Modules, Transistors - IGBTs - Arrays and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RW1E025RPT2CR electronic components. RW1E025RPT2CR can be shipped within 24 hours after order. If you have any demands for RW1E025RPT2CR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RW1E025RPT2CR Product Attributes
Part Number :
RW1E025RPT2CR
Manufacturer :
Rohm Semiconductor
Description :
MOSFET P-CH 30V 2.5A WEMT6
Series :
-
Part Status :
Not For New Designs
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4V, 10V
Rds On (Max) @ Id, Vgs :
75 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
5.2nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
480pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
700mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
6-WEMT
Package / Case :
SOT-563, SOT-666
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