IXYS - IXTH1N200P3HV

KEY Part #: K6394698

IXTH1N200P3HV Pricing (USD) [14773pcs Stock]

  • 1 pcs$10.98948
  • 10 pcs$9.98875
  • 100 pcs$8.49044

Part Number:
IXTH1N200P3HV
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 2000V 1A TO-247HV.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Rectifiers - Single, Transistors - IGBTs - Single, Thyristors - TRIACs, Transistors - Programmable Unijunction, Diodes - Zener - Single, Transistors - Special Purpose and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in IXYS IXTH1N200P3HV electronic components. IXTH1N200P3HV can be shipped within 24 hours after order. If you have any demands for IXTH1N200P3HV, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTH1N200P3HV Product Attributes

Part Number : IXTH1N200P3HV
Manufacturer : IXYS
Description : MOSFET N-CH 2000V 1A TO-247HV
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 2000V
Current - Continuous Drain (Id) @ 25°C : 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 40 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23.5nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 646pF @ 25V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247HV
Package / Case : TO-247-3 Variant