FQA8N100C Pricing (USD) [19564pcs Stock]
- 1 pcs$2.10655
- 10 pcs$1.88135
- 100 pcs$1.54285
- 500 pcs$1.24932
- 1,000 pcs$0.99961
- Part Number:
- FQA8N100C
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 1000V 8A TO-3P.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - IGBTs - Arrays, Transistors - Special Purpose, Thyristors - SCRs, Diodes - Zener - Arrays, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Single and Diodes - RF ...
- Competitive Advantage:
- We specialize in ON Semiconductor FQA8N100C electronic components. FQA8N100C can be shipped within 24 hours after order. If you have any demands for FQA8N100C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQA8N100C Product Attributes
Part Number :
FQA8N100C
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 1000V 8A TO-3P
Series :
QFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.45 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3220pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
225W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-3PN
Package / Case :
TO-3P-3, SC-65-3
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