TK1K9A60F,S4X Pricing (USD) [102769pcs Stock]
- 1 pcs$0.38047
- Part Number:
- TK1K9A60F,S4X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- PB-F POWER MOSFET TRANSISTOR TO-.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Single, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK1K9A60F,S4X electronic components. TK1K9A60F,S4X can be shipped within 24 hours after order. If you have any demands for TK1K9A60F,S4X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK1K9A60F,S4X Product Attributes
Part Number :
TK1K9A60F,S4X
Manufacturer :
Toshiba Semiconductor and Storage
Description :
PB-F POWER MOSFET TRANSISTOR TO-
Series :
U-MOSIX
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.9 Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id :
4V @ 400µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
490pF @ 300V
FET Feature :
-
Power Dissipation (Max) :
30W (Tc)
Operating Temperature :
150°C
Mounting Type :
Through Hole
Supplier Device Package :
TO-220SIS
Package / Case :
TO-220-3 Full Pack
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