Vishay Siliconix - SIA440DJ-T1-GE3

KEY Part #: K6421378

SIA440DJ-T1-GE3 Pricing (USD) [498195pcs Stock]

  • 1 pcs$0.07424
  • 3,000 pcs$0.07013

Part Number:
SIA440DJ-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 40V 12A SC-70.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Vishay Siliconix SIA440DJ-T1-GE3 electronic components. SIA440DJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA440DJ-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIA440DJ-T1-GE3 Product Attributes

Part Number : SIA440DJ-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 40V 12A SC-70
Series : TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 10V
Rds On (Max) @ Id, Vgs : 26 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 21.5nC @ 10V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 700pF @ 20V
FET Feature : -
Power Dissipation (Max) : 3.5W (Ta), 19W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® SC-70-6 Single
Package / Case : PowerPAK® SC-70-6