Part Number :
TPC8110(TE12L,Q,M)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET P-CH 40V 8A SOP8 2-6J1B
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4V, 10V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id :
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
48nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2180pF @ 10V
Power Dissipation (Max) :
1W (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SOP (5.5x6.0)
Package / Case :
8-SOIC (0.173", 4.40mm Width)