Manufacturer :
Microsemi Corporation
Description :
POWER MOSFET - SIC
Technology :
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) :
700V
Current - Continuous Drain (Id) @ 25°C :
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
20V
Rds On (Max) @ Id, Vgs :
70 mOhm @ 32.5A, 20V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
125nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds :
-
Power Dissipation (Max) :
300W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247 [B]
Package / Case :
TO-247-3