Infineon Technologies - SIDC08D120H6X1SA1

KEY Part #: K6449672

[661pcs Stock]


    Part Number:
    SIDC08D120H6X1SA1
    Manufacturer:
    Infineon Technologies
    Detailed description:
    DIODE GEN PURP 1.2KV 10A WAFER.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Transistors - JFETs, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolar (BJT) - Single ...
    Competitive Advantage:
    We specialize in Infineon Technologies SIDC08D120H6X1SA1 electronic components. SIDC08D120H6X1SA1 can be shipped within 24 hours after order. If you have any demands for SIDC08D120H6X1SA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SIDC08D120H6X1SA1 Product Attributes

    Part Number : SIDC08D120H6X1SA1
    Manufacturer : Infineon Technologies
    Description : DIODE GEN PURP 1.2KV 10A WAFER
    Series : -
    Part Status : Discontinued at Digi-Key
    Diode Type : Standard
    Voltage - DC Reverse (Vr) (Max) : 1200V
    Current - Average Rectified (Io) : 10A (DC)
    Voltage - Forward (Vf) (Max) @ If : 1.6V @ 10A
    Speed : Standard Recovery >500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : -
    Current - Reverse Leakage @ Vr : 27µA @ 1200V
    Capacitance @ Vr, F : -
    Mounting Type : Surface Mount
    Package / Case : Die
    Supplier Device Package : Sawn on foil
    Operating Temperature - Junction : -55°C ~ 150°C

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